- Manufacture :
- Series :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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VIEW |
2,639
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 30A TO247-3 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 30A (DC) | 1.7V @ 30A | 1.1mA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 860pF @ 1V, 1MHz | |||
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VIEW |
3,994
In-stock
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 30A TO247-2 | Amp+™ | Obsolete | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 30A (DC) | 1.7V @ 30A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 135°C | 1790pF @ 1V, 1MHz | |||
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VIEW |
859
In-stock
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Global Power Technologies Group | DIODE SCHOTTKY 1200V 81A TO247-2 | Amp+™ | Obsolete | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 81A | 1.7V @ 30A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 135°C | 1790pF @ 1V, 1MHz | |||
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VIEW |
1,124
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 30A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 30A (DC) | 1.7V @ 30A | 220µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 860pF @ 1V, 1MHz |