Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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1,715
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Infineon Technologies DIODE SILICON 300V 10A WAFER - Discontinued at Digi-Key Bulk Surface Mount Die Sawn on foil Silicon Carbide Schottky 10A (DC) 1.7V @ 10A 200µA @ 300V 300V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 600pF @ 1V, 1MHz
SDP10S30
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2,167
In-stock
Infineon Technologies DIODE SCHOTTKY 300V 10A TO220-3 thinQ!™ Obsolete Tube Through Hole TO-220-3 PG-TO220-3 Silicon Carbide Schottky 10A (DC) 1.7V @ 10A 200µA @ 300V 300V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 600pF @ 0V, 1MHz
CSD10030A
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RFQ
2,546
In-stock
Cree/Wolfspeed DIODE SCHOTTKY 300V 10A TO220-2 - Obsolete Tube Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky 10A 1.4V @ 10A 200µA @ 300V 300V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 660pF @ 0V, 1MHz
SDT10S30
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RFQ
2,484
In-stock
Infineon Technologies DIODE SCHOTTKY 300V 10A TO220-2 thinQ!™ Obsolete Tube Through Hole TO-220-2 PG-TO220-2 Silicon Carbide Schottky 10A (DC) 1.7V @ 10A 200µA @ 300V 300V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 600pF @ 0V, 1MHz
GB02SHT03-46
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RFQ
3,204
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GeneSiC Semiconductor DIODE SCHOTTKY 300V 4A - Active Bulk Through Hole TO-206AB, TO-46-3 Metal Can TO-46 Silicon Carbide Schottky 4A (DC) 1.6V @ 1A 5µA @ 300V 300V No Recovery Time > 500mA (Io) 0ns -55°C ~ 225°C 76pF @ 1V, 1MHz