Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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703
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Microsemi Corporation UNRLS, FG, GEN2, SIC SBD, TO-268 - Active - Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA D3Pak Silicon Carbide Schottky 50A (DC) - - 1200V No Recovery Time > 500mA (Io) 0ns - -
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3,139
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Global Power Technologies Group DIODE SCHOTTKY 1.2KV 50A TO220-2 Amp+™ Active Tube Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky 50A (DC) 1.8V @ 15A 30µA @ 1200V 1200V No Recovery Time > 500mA (Io) - -55°C ~ 175°C 952pF @ 1V, 1MHz
GDP50P120B
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1,685
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Global Power Technologies Group DIODE SCHOTTKY 1.2KV 50A TO247-2 Amp+™ Obsolete Tube Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 50A (DC) 1.7V @ 50A 100µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 135°C 2984pF @ 1V, 1MHz
GP2D050A120B
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2,241
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Global Power Technologies Group DIODE SCHOTTKY 1.2KV 50A TO247-2 Amp+™ Active Tube Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 50A (DC) 1.8V @ 50A 100µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 3174pF @ 1V, 1MHz
MSC050SDA070B
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1,122
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Microsemi Corporation DIODE SCHOTTKY 700V 50A TO247 - Active - Through Hole TO-247-2 TO-247 Silicon Carbide Schottky 50A (DC) 1.5V @ 50A - 700V No Recovery Time > 500mA (Io) 0ns - -
GP2D050A060B
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2,872
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Global Power Technologies Group DIODE SCHOTTKY 600V 50A TO247-2 Amp+™ Active Tube Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 50A (DC) 1.65V @ 50A 170µA @ 600V 600V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 2635pF @ 1V, 1MHz