- Manufacture :
- Part Status :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||
|
VIEW |
2,475
In-stock
|
Global Power Technologies Group | DIODE SCHOTT 1.2KV 60A TO247-2 | Amp+™ | Obsolete | Tube | Through Hole | TO-247-2 | Silicon Carbide Schottky | 60A (DC) | 1.7V @ 60A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 135°C | 3581pF @ 1V, 1MHz | |||
|
|
VIEW |
2,825
In-stock
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Global Power Technologies Group | DIODE SCHOTT 1.2KV 60A TO247-2 | Amp+™ | Obsolete | Tube | Through Hole | TO-247-2 | Silicon Carbide Schottky | 60A (DC) | 1.7V @ 60A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 135°C | 3581pF @ 1V, 1MHz | |||
|
VIEW |
3,440
In-stock
|
ON Semiconductor | 650V 50A SIC SBD | - | Active | - | Through Hole | TO-247-2 | Silicon Carbide Schottky | 60A (DC) | 1.75V @ 50A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2530pF @ 1V, 100kHz | |||
