- Manufacture :
- Series :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
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10 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,273
In-stock
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Microsemi Corporation | DIODE SIC 650V 46A TO247 | - | Obsolete | Bulk | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 46A | 1.8V @ 30A | 600µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 945pF @ 1V, 1MHz | |||
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|
VIEW |
2,380
In-stock
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Infineon Technologies | DIODE SIC 600V 8A SAWN WAFER | thinQ!™ | Obsolete | Bulk | Surface Mount | Die | Die | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 310pF @ 1V, 1MHz | |||
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|
VIEW |
2,053
In-stock
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Infineon Technologies | DIODE SIC 600V 8A SAWN WAFER | thinQ!™ | Obsolete | Bulk | Surface Mount | Die | Die | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 310pF @ 1V, 1MHz | |||
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VIEW |
3,470
In-stock
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Infineon Technologies | DIODE SIC 600V 5A SAWN WAFER | thinQ!™ | Obsolete | Bulk | Surface Mount | Die | Die | Silicon Carbide Schottky | 5A (DC) | 1.7V @ 5A | 70µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 240pF @ 1V, 1MHz | |||
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VIEW |
2,408
In-stock
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Infineon Technologies | DIODE SIC 600V 4A SAWN WAFER | thinQ!™ | Obsolete | Bulk | Surface Mount | Die | Die | Silicon Carbide Schottky | 4A (DC) | 1.9V @ 4A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | |||
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|
VIEW |
3,961
In-stock
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Infineon Technologies | DIODE SCHOTTKY 1.2KV 7.5A WAFER | thinQ!™ | Obsolete | Bulk | Surface Mount | Die | Sawn on foil | Silicon Carbide Schottky | 7.5A (DC) | 1.8V @ 7.5A | 180µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 380pF @ 1V, 1MHz | |||
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|
VIEW |
1,129
In-stock
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Infineon Technologies | DIODE SCHOTTKY 1.2KV 7.5A WAFER | thinQ!™ | Obsolete | Bulk | Surface Mount | Die | Sawn on foil | Silicon Carbide Schottky | 7.5A (DC) | 1.8V @ 7.5A | 180µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 380pF @ 1V, 1MHz | |||
|
VIEW |
3,362
In-stock
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Microsemi Corporation | DIODE SILICON 650V 32A TO220 | - | Obsolete | Bulk | Through Hole | TO-220-2 | TO-220 [K] | Silicon Carbide Schottky | 32A | 1.8V @ 20A | 400µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 680pF @ 100mV, 1MHz | |||
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VIEW |
1,580
In-stock
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Microsemi Corporation | DIODE SCHOTTKY 1.2KV 10A TO220 | - | Obsolete | Bulk | Through Hole | TO-220-2 | TO-220 | Silicon Carbide Schottky | 10A | 1.5V @ 10A | - | 1200V | No Recovery Time > 500mA (Io) | 0ns | - | - | |||
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|
VIEW |
3,342
In-stock
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Microsemi Corporation | DIODE SILICON 650V 17A TO220 | - | Obsolete | Bulk | Through Hole | TO-220-2 | TO-220 [K] | Silicon Carbide Schottky | 17A | 1.8V @ 10A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 300pF @ 1V, 1MHz | |||
