Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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3,048
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Infineon Technologies DIODE SCHOTTKY 1.2KV 7.5A TO247 thinQ!™ Obsolete Tube Through Hole TO-247-3 Variant PG-TO247HC-3 Silicon Carbide Schottky 7.5A (DC) 1.8V @ 10A 180µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 150°C 375pF @ 1V, 1MHz
APT10SCD120B
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1,310
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Microsemi Corporation DIODE SCHOTTKY 1.2KV 36A TO247 - Obsolete Tube Through Hole TO-247-2 TO-247 Silicon Carbide Schottky 36A (DC) 1.8V @ 10A 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 150°C 600pF @ 0V, 1MHz
APT10SCD65K
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3,342
In-stock
Microsemi Corporation DIODE SILICON 650V 17A TO220 - Obsolete Bulk Through Hole TO-220-2 TO-220 [K] Silicon Carbide Schottky 17A 1.8V @ 10A 200µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 150°C 300pF @ 1V, 1MHz