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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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VIEW |
2,408
In-stock
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Infineon Technologies | DIODE SIC 600V 4A SAWN WAFER | thinQ!™ | Obsolete | Bulk | Surface Mount | Die | Die | Silicon Carbide Schottky | 4A (DC) | 1.9V @ 4A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | |||
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VIEW |
966
In-stock
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Infineon Technologies | DIODE SCHOTTKY 600V 5.6A TO252-3 | thinQ!™ | Obsolete | Digi-Reel® | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | Silicon Carbide Schottky | 5.6A | 1.9V @ 4A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | |||
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VIEW |
1,062
In-stock
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Infineon Technologies | DIODE SCHOTTKY 600V 5.6A TO252-3 | thinQ!™ | Obsolete | Cut Tape (CT) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | Silicon Carbide Schottky | 5.6A | 1.9V @ 4A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | |||
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VIEW |
1,526
In-stock
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Infineon Technologies | DIODE SCHOTTKY 600V 5.6A TO252-3 | thinQ!™ | Obsolete | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | Silicon Carbide Schottky | 5.6A | 1.9V @ 4A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | |||
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VIEW |
762
In-stock
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Infineon Technologies | DIODE SCHOTTKY 600V 4A TO220-2FP | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | Silicon Carbide Schottky | 4A (DC) | 1.9V @ 4A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | |||
