- Voltage - Forward (Vf) (Max) @ If :
- Capacitance @ Vr, F :
- Applied Filters :
5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,436
In-stock
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 800V 2A SOD57 | - | Active | Tape & Reel (TR) | Through Hole | SOD-57, Axial | SOD-57 | Avalanche | 2A | 1.65V @ 10A | 1µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | 4µs | -55°C ~ 175°C | 16pF @ 4V, 1MHz | |||
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VIEW |
3,520
In-stock
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 800V 2A SOD57 | - | Active | Tape & Reel (TR) | Through Hole | SOD-57, Axial | SOD-57 | Avalanche | 2A | 1V @ 1A | 1µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | 4µs | -55°C ~ 175°C | 20pF @ 4V, 1MHz | |||
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VIEW |
3,294
In-stock
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 800V 2A SOD57 | - | Active | Tape & Reel (TR) | Through Hole | SOD-57, Axial | SOD-57 | Avalanche | 2A | 1V @ 1A | 1µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | 4µs | -55°C ~ 175°C | - | |||
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VIEW |
2,581
In-stock
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 800V 1.5A SOD57 | - | Active | Tape & Reel (TR) | Through Hole | SOD-57, Axial | SOD-57 | Avalanche | 1.5A | 1.1V @ 1A | 1µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | 4µs | -55°C ~ 175°C | - | |||
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VIEW |
3,750
In-stock
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 800V 2A SOD57 | - | Active | Tape & Reel (TR) | Through Hole | SOD-57, Axial | SOD-57 | Avalanche | 2A | 1.15V @ 2.5A | 1µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | 4µs | -55°C ~ 175°C | 40pF @ 0V, 1MHz | |||
