- Manufacture :
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- Current - Average Rectified (Io) :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Operating Temperature - Junction | Capacitance @ Vr, F | |
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VIEW |
680
In-stock
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Nexperia USA Inc. | DIODE SCHOTTKY 40V 200MA SOD882 | - | Active | Digi-Reel® | Surface Mount | SOD-882 | DFN1006-2 | Schottky | 200mA (DC) | 600mV @ 200mA | 10µA @ 40V | 40V | Small Signal =< 200mA (Io), Any Speed | 150°C (Max) | 20pF @ 1V, 1MHz | |||
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VIEW |
3,571
In-stock
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Nexperia USA Inc. | DIODE SCHOTTKY 40V 200MA SOD882 | - | Active | Cut Tape (CT) | Surface Mount | SOD-882 | DFN1006-2 | Schottky | 200mA (DC) | 600mV @ 200mA | 10µA @ 40V | 40V | Small Signal =< 200mA (Io), Any Speed | 150°C (Max) | 20pF @ 1V, 1MHz | |||
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VIEW |
2,803
In-stock
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Nexperia USA Inc. | DIODE SCHOTTKY 40V 200MA SOD882 | - | Active | Tape & Reel (TR) | Surface Mount | SOD-882 | DFN1006-2 | Schottky | 200mA (DC) | 600mV @ 200mA | 10µA @ 40V | 40V | Small Signal =< 200mA (Io), Any Speed | 150°C (Max) | 20pF @ 1V, 1MHz | |||
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VIEW |
3,502
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 200MA CST2 | - | Active | Digi-Reel® | Surface Mount | SOD-882 | CST2 | Schottky | 200mA | 600mV @ 200mA | 5µA @ 30V | 30V | Fast Recovery = 200mA (Io) | 125°C (Max) | 16pF @ 0V, 1MHz | |||
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VIEW |
2,728
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 200MA CST2 | - | Active | Cut Tape (CT) | Surface Mount | SOD-882 | CST2 | Schottky | 200mA | 600mV @ 200mA | 5µA @ 30V | 30V | Fast Recovery = 200mA (Io) | 125°C (Max) | 16pF @ 0V, 1MHz | |||
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VIEW |
1,382
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 200MA CST2 | - | Active | Tape & Reel (TR) | Surface Mount | SOD-882 | CST2 | Schottky | 200mA | 600mV @ 200mA | 5µA @ 30V | 30V | Fast Recovery = 200mA (Io) | 125°C (Max) | 16pF @ 0V, 1MHz |