Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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HERA807G C0G
RFQ
VIEW
RFQ
1,438
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.7V @ 8A 10µA @ 800V 800V Fast Recovery = 200mA (Io) 80ns -55°C ~ 150°C 55pF @ 4V, 1MHz
HERA806G C0G
RFQ
VIEW
RFQ
2,746
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.7V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -55°C ~ 150°C 55pF @ 4V, 1MHz
HERA808G C0G
RFQ
VIEW
RFQ
3,084
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.7V @ 8A 10µA @ 1000V - Fast Recovery = 200mA (Io) 80ns -55°C ~ 150°C 55pF @ 4V, 1MHz
IDP08E65D1XKSA1
RFQ
VIEW
RFQ
1,876
In-stock
Infineon Technologies DIODE GEN PURP 650V 8A TO220-2 - Active Tube Through Hole TO-220-2 TO-220-2 Standard 8A 1.7V @ 8A 40µA @ 650V 650V Fast Recovery = 200mA (Io) 80ns -40°C ~ 175°C -