Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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STPSC8H065D
RFQ
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RFQ
3,496
In-stock
STMicroelectronics DIODE SCHOTTKY 650V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 8A 1.75V @ 8A 80µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -40°C ~ 175°C 414pF @ 0V, 1MHz
STPSC806D
RFQ
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RFQ
3,511
In-stock
STMicroelectronics DIODE SCHOTTKY 600V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 8A 1.7V @ 8A 100µA @ 600V 600V No Recovery Time > 500mA (Io) 0ns -40°C ~ 175°C 450pF @ 0V, 1MHz
IDV08E65D2XKSA1
RFQ
VIEW
RFQ
1,484
In-stock
Infineon Technologies DIODE GEN PURP 650V 8A TO220-2 - Active Tube Through Hole TO-220-2 TO-220-2 Standard 8A 2.3V @ 8A 40µA @ 650V 650V Fast Recovery = 200mA (Io) 40ns -40°C ~ 175°C -
IDP08E65D1XKSA1
RFQ
VIEW
RFQ
1,876
In-stock
Infineon Technologies DIODE GEN PURP 650V 8A TO220-2 - Active Tube Through Hole TO-220-2 TO-220-2 Standard 8A 1.7V @ 8A 40µA @ 650V 650V Fast Recovery = 200mA (Io) 80ns -40°C ~ 175°C -
IDP08E65D2XKSA1
RFQ
VIEW
RFQ
2,383
In-stock
Infineon Technologies DIODE GEN PURP 650V 8A TO220-2 - Active Tube Through Hole TO-220-2 TO-220-2 Standard 8A 2.3V @ 3A 40µA @ 650V 650V Fast Recovery = 200mA (Io) 40ns -40°C ~ 175°C -
STTH8R04D
RFQ
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RFQ
2,000
In-stock
STMicroelectronics DIODE GEN PURP 400V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.5V @ 8A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -40°C ~ 175°C -