Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction
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VS-20ETF02-M3
RFQ
VIEW
RFQ
2,139
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 20A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 20A 1.3V @ 20A 100µA @ 200V 200V Fast Recovery = 200mA (Io) 60ns -40°C ~ 150°C
VS-20ETF06-M3
RFQ
VIEW
RFQ
729
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 20A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 20A 1.3V @ 20A 100µA @ 600V 600V Fast Recovery = 200mA (Io) 160ns -40°C ~ 150°C
VS-20ETF10-M3
RFQ
VIEW
RFQ
3,701
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 20A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 20A 1.3V @ 20A 100µA @ 1000V 1000V Fast Recovery = 200mA (Io) 95ns -40°C ~ 150°C
VS-20ETF08-M3
RFQ
VIEW
RFQ
3,537
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 20A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 20A 1.3V @ 20A 100µA @ 800V 800V Fast Recovery = 200mA (Io) 95ns -40°C ~ 150°C
VS-20ETF04-M3
RFQ
VIEW
RFQ
2,426
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 20A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 20A 1.3V @ 20A 100µA @ 400V 400V Fast Recovery = 200mA (Io) 160ns -40°C ~ 150°C
VS-20ETS08-M3
RFQ
VIEW
RFQ
931
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 20A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 20A 1.1V @ 20A 100µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -40°C ~ 150°C
VS-20ETF12-M3
RFQ
VIEW
RFQ
1,826
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 20A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 20A 1.31V @ 20A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 400ns -40°C ~ 150°C