- Supplier Device Package :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
12 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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1,728
In-stock
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Infineon Technologies | DIODE GEN PURP 650V 40A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Standard | 40A (DC) | 2.2V @ 20A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 32ns | -40°C ~ 175°C | - | ||||
VIEW |
1,484
In-stock
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Infineon Technologies | DIODE GEN PURP 650V 8A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 8A | 2.3V @ 8A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 40ns | -40°C ~ 175°C | - | ||||
VIEW |
2,412
In-stock
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Infineon Technologies | DIODE GEN PURP 650V 60A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Standard | 60A (DC) | 2.2V @ 30A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 42ns | -40°C ~ 175°C | - | ||||
VIEW |
1,876
In-stock
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Infineon Technologies | DIODE GEN PURP 650V 8A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 8A | 1.7V @ 8A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 80ns | -40°C ~ 175°C | - | ||||
VIEW |
3,681
In-stock
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Rohm Semiconductor | DIODE SC SCHKY 650V 8A TO220ACP | - | Active | Tube | Through Hole | TO-220-2 | - | Silicon Carbide Schottky | 8A (DC) | 1.5V @ 8A | 40µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 400pF @ 1V, 1MHz | ||||
VIEW |
2,581
In-stock
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Infineon Technologies | DIODE GEN PURP 650V 15A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 15A | 2.2V @ 15A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 47ns | -40°C ~ 175°C | - | ||||
VIEW |
847
In-stock
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Infineon Technologies | DIODE GEN PURP 650V 15A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 15A | 1.7V @ 15A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 114ns | -40°C ~ 175°C | - | ||||
VIEW |
2,383
In-stock
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Infineon Technologies | DIODE GEN PURP 650V 8A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 8A | 2.3V @ 3A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 40ns | -40°C ~ 175°C | - | ||||
VIEW |
1,679
In-stock
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Infineon Technologies | DIODE GEN PURP 650V 40A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 40A | 2.3V @ 40A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 75ns | -40°C ~ 175°C | - | ||||
VIEW |
3,528
In-stock
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STMicroelectronics | DIODE SCHOTTKY 650V 4A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 4A | 1.75V @ 4A | 40µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 200pF @ 0V, 1MHz | ||||
VIEW |
2,326
In-stock
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Infineon Technologies | DIODE GEN PURP 650V 15A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220 | Standard | 15A | 2.3V @ 15A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 47ns | -40°C ~ 175°C | - | ||||
VIEW |
2,435
In-stock
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Infineon Technologies | DIODE GEN PURP 650V 60A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Standard | 60A (DC) | 1.7V @ 30A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 64ns | -40°C ~ 175°C | - |