- Part Status :
- Supplier Device Package :
- Diode Type :
- Current - Average Rectified (Io) :
- Current - Reverse Leakage @ Vr :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
1,684
In-stock
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Rohm Semiconductor | DIODE SCHOTTKY 600V 10A TO220FM | - | Not For New Designs | Tube | Through Hole | TO-220-2 | TO-220FM | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | 150°C (Max) | 430pF @ 1V, 1MHz | |||
|
VIEW |
3,788
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 780pF @ 0V, 1MHz | |||
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|
VIEW |
2,085
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 35A (DC) | 1.7V @ 10A | 100µA @ 1700V | 1700V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1400pF @ 0V, 1MHz | |||
|
VIEW |
2,745
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 10A | 1.7V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
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|
VIEW |
1,801
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 10A | 1.7V @ 10A | 10µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
VIEW |
1,967
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 10A TO220-2L | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | - | |||
|
VIEW |
2,593
In-stock
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Rohm Semiconductor | DIODE SCHOTTKY 600V 10A TO220AC | - | Not For New Designs | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 430pF @ 1V, 1MHz | |||
|
VIEW |
3,870
In-stock
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Littelfuse Inc. | DIODE SC SCHOTKY 1200V 10A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 500pF @ 1V, 1MHz | |||
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|
VIEW |
1,549
In-stock
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Littelfuse Inc. | DIODE SIC SCHOTKY 650V 10A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 250µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 290pF @ 1V, 1MHz | |||
|
VIEW |
3,309
In-stock
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WeEn Semiconductors | DIODE SCHOTTKY 650V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 250µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 300pF @ 1V, 1MHz | |||
|
VIEW |
822
In-stock
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STMicroelectronics | DIODE GEN PURP 400V 10A TO220AC | - | Obsolete | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 10A | 1.7V @ 10A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 40ns | 175°C (Max) | - | |||
