Voltage - Forward (Vf) (Max) @ If :
Current - Reverse Leakage @ Vr :
Capacitance @ Vr, F :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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BYC5-1200PQ
RFQ
VIEW
RFQ
1,018
In-stock
WeEn Semiconductors DIODE GEN PURP 1.2KV 5A TO220AC - Active - Through Hole TO-220-2 TO-220AC Standard 5A 3.2V @ 5A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 36ns 175°C (Max) -
BYC30-1200PQ
RFQ
VIEW
RFQ
695
In-stock
WeEn Semiconductors DIODE GEN PURP 1.2KV 30A TO220AC - Active - Through Hole TO-220-2 TO-220AC Standard 30A 3.3V @ 30A 250µA @ 1200V 1200V Fast Recovery = 200mA (Io) 65ns 175°C (Max) -
Default Photo
RFQ
VIEW
RFQ
3,433
In-stock
WeEn Semiconductors DIODE GEN PURP 600V 30A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 30A 1.55V @ 30A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns 175°C (Max) -
Default Photo
RFQ
VIEW
RFQ
1,507
In-stock
WeEn Semiconductors DIODE GEN PURP 600V 30A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 30A 1.8V @ 30A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns 175°C (Max) -
BYC20D-600PQ
RFQ
VIEW
RFQ
3,059
In-stock
WeEn Semiconductors DIODE GEN PURP 600V 20A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 20A 2.9V @ 20A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 20ns 175°C (Max) -
BYC15-600PQ
RFQ
VIEW
RFQ
3,289
In-stock
WeEn Semiconductors DIODE GEN PURP 600V 15A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 15A 3.2V @ 15A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 18ns 175°C (Max) -
BYR29-600,127
RFQ
VIEW
RFQ
3,476
In-stock
WeEn Semiconductors DIODE GEN PURP 600V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.5V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns 150°C (Max) -
TRS8E65C,S1Q
RFQ
VIEW
RFQ
2,827
In-stock
Toshiba Semiconductor and Storage DIODE SCHOTTKY 650V 8A TO220-2L - Active Tube Through Hole TO-220-2 TO-220-2L Silicon Carbide Schottky 8A (DC) 1.7V @ 8A 90µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 44pF @ 650V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,899
In-stock
Comchip Technology DIODE SILICON CARBIDE POWER SCHO - Active - Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky 5A (DC) 1.7V @ 5A 100µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 475pF @ 0V, 1MHz
VS-20ETF02-M3
RFQ
VIEW
RFQ
2,139
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 20A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 20A 1.3V @ 20A 100µA @ 200V 200V Fast Recovery = 200mA (Io) 60ns -40°C ~ 150°C -
VS-20ETF06-M3
RFQ
VIEW
RFQ
729
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 20A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 20A 1.3V @ 20A 100µA @ 600V 600V Fast Recovery = 200mA (Io) 160ns -40°C ~ 150°C -
VS-20ETF10-M3
RFQ
VIEW
RFQ
3,701
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 20A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 20A 1.3V @ 20A 100µA @ 1000V 1000V Fast Recovery = 200mA (Io) 95ns -40°C ~ 150°C -
VS-20ETF08-M3
RFQ
VIEW
RFQ
3,537
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 20A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 20A 1.3V @ 20A 100µA @ 800V 800V Fast Recovery = 200mA (Io) 95ns -40°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
2,613
In-stock
ON Semiconductor DIODE SCHOTTKY 1.2KV TO220-2 - Active Tube Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky - 1.75V @ 5A 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns - -
STPSC8H065D
RFQ
VIEW
RFQ
3,496
In-stock
STMicroelectronics DIODE SCHOTTKY 650V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 8A 1.75V @ 8A 80µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -40°C ~ 175°C 414pF @ 0V, 1MHz
SCS210AMC
RFQ
VIEW
RFQ
2,409
In-stock
Rohm Semiconductor DIODE SCHOTTKY 650V 10A TO220FM - Active Tube Through Hole TO-220-2 TO-220FM Silicon Carbide Schottky 10A (DC) 1.55V @ 10A 200µA @ 600V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 365pF @ 1V, 1MHz
DHG20I1200PA
RFQ
VIEW
RFQ
3,953
In-stock
IXYS DIODE GEN PURP 1.2KV 20A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 20A 2.7V @ 20A 30µA @ 1200V 1200V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C -
DHG30I600PA
RFQ
VIEW
RFQ
3,092
In-stock
IXYS DIODE GEN PURP 600V 30A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 30A 2.37V @ 30A 50µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C -
DHG20I600PA
RFQ
VIEW
RFQ
3,416
In-stock
IXYS DIODE GEN PURP 600V 20A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 20A 2.32V @ 20A 30µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C -
DHG10I1800PA
RFQ
VIEW
RFQ
2,373
In-stock
IXYS DIODE GEN PURP 1.8KV 10A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 10A 2.23V @ 10A 50µA @ 1800V 1800V Fast Recovery = 200mA (Io) 300ns -55°C ~ 150°C 3pF @ 900V, 1MHz
IDP20E65D2XKSA1
RFQ
VIEW
RFQ
1,728
In-stock
Infineon Technologies DIODE GEN PURP 650V 40A TO220-2 - Active Tube Through Hole TO-220-2 PG-TO220-2-1 Standard 40A (DC) 2.2V @ 20A 40µA @ 650V 650V Fast Recovery = 200mA (Io) 32ns -40°C ~ 175°C -
IDP15E60XKSA1
RFQ
VIEW
RFQ
1,499
In-stock
Infineon Technologies DIODE GEN PURP 600V 29.2A TO220 - Active Tube Through Hole TO-220-2 PG-TO220-2 Standard 29.2A (DC) 2V @ 15A 50µA @ 600V 600V Fast Recovery = 200mA (Io) 87ns -55°C ~ 175°C -
20TQ035
RFQ
VIEW
RFQ
3,655
In-stock
SMC Diode Solutions DIODE SCHOTTKY 35V 20A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Schottky 20A 570mV @ 20A 2.7mA @ 35V 35V Fast Recovery = 200mA (Io) - -55°C ~ 150°C 1400pF @ 5V, 1MHz
UGA15120 C0G
RFQ
VIEW
RFQ
3,074
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 15A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 15A 2.9V @ 15A 5µA @ 1200V - Fast Recovery = 200mA (Io) 65ns -55°C ~ 175°C -
UG8JT-E3/45
RFQ
VIEW
RFQ
3,003
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.75V @ 8A 30µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
UG8HT-E3/45
RFQ
VIEW
RFQ
3,254
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 500V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.75V @ 8A 30µA @ 500V 500V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
SBL10L25-E3/45
RFQ
VIEW
RFQ
1,619
In-stock
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 25V 10A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Schottky 10A 460mV @ 10A 800µA @ 25V 25V Fast Recovery = 200mA (Io) - -65°C ~ 150°C -
FES8FT-E3/45
RFQ
VIEW
RFQ
3,204
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 300V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.3V @ 8A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
SRA1660 C0G
RFQ
VIEW
RFQ
1,022
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 16A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Schottky 16A 700mV @ 16A 500µA @ 60V 60V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
BYW29-200-E3/45
RFQ
VIEW
RFQ
998
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.3V @ 20A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -65°C ~ 150°C 45pF @ 4V, 1MHz