Voltage - Forward (Vf) (Max) @ If :
Voltage - DC Reverse (Vr) (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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SF1608GHC0G
RFQ
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1,972
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Taiwan Semiconductor Corporation DIODE GEN PURP 600V 16A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 16A 1.7V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF1607GHC0G
RFQ
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RFQ
913
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Taiwan Semiconductor Corporation DIODE GEN PURP 500V 16A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 16A 1.7V @ 8A 10µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF1606GHC0G
RFQ
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RFQ
2,164
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Taiwan Semiconductor Corporation DIODE GEN PURP 400V 16A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 16A 1.3V @ 8A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF1605GHC0G
RFQ
VIEW
RFQ
1,943
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Taiwan Semiconductor Corporation DIODE GEN PURP 300V 16A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 16A 1.3V @ 8A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz