Current - Average Rectified (Io) :
Voltage - Forward (Vf) (Max) @ If :
Current - Reverse Leakage @ Vr :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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SF1607GHC0G
RFQ
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913
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Taiwan Semiconductor Corporation DIODE GEN PURP 500V 16A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 16A 1.7V @ 8A 10µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF2007GHC0G
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781
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Taiwan Semiconductor Corporation DIODE GEN PURP 500V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 1.7V @ 10A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF1007GHC0G
RFQ
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Taiwan Semiconductor Corporation DIODE GEN PURP 500V 10A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 10A 1.7V @ 5A 10µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
SF807GHC0G
RFQ
VIEW
RFQ
1,796
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 8A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 8A 1.7V @ 8A 10µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz