- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
3,456
In-stock
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Central Semiconductor Corp | DIODE SCHOTTKY 20V 500MA SOD882 | - | Active | Tape & Reel (TR) | Surface Mount | SOD-882 | SOD-882 | Schottky | 500mA | 220mV @ 10mA | 8µA @ 10V | 20V | Fast Recovery = 200mA (Io) | - | -65°C ~ 150°C | 30pF @ 1V, 1MHz | |||
|
VIEW |
606
In-stock
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Nexperia USA Inc. | DIODE SCHOTTKY 20V 500MA SOD882 | - | Active | Tape & Reel (TR) | Surface Mount | SOD-882 | DFN1006-2 | Schottky | 500mA | 390mV @ 500mA | 200µA @ 20V | 20V | Fast Recovery = 200mA (Io) | 1.6ns | 150°C (Max) | 40pF @ 1V, 1MHz | |||
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VIEW |
3,150
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 40V 500MA CST2 | - | Active | Tape & Reel (TR) | Surface Mount | SOD-882 | CST2 | Schottky | 500mA | 350mV @ 100mA | 30µA @ 10V | 40V | Fast Recovery = 200mA (Io) | - | 125°C (Max) | 42pF @ 0V, 1MHz | |||
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VIEW |
3,105
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 500MA CST2 | - | Active | Tape & Reel (TR) | Surface Mount | SOD-882 | CST2 | Schottky | 500mA | 340mV @ 100mA | 150µA @ 10V | 30V | Fast Recovery = 200mA (Io) | - | 125°C (Max) | 55pF @ 0V, 1MHz | |||
|
VIEW |
3,076
In-stock
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Toshiba Semiconductor and Storage | X34 PB-F CST2B SBD DIODE VR:30V, | - | Active | Tape & Reel (TR) | Surface Mount | SOD-882 | CST2B | Schottky | 500mA | - | 50µA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | 125°C (Max) | 118pF @ 0V, 1MHz | |||
