Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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RGF1D
RFQ
VIEW
RFQ
3,933
In-stock
ON Semiconductor DIODE GEN PURP 200V 1A DO214AC - Active Cut Tape (CT) Surface Mount DO-214AC, SMA DO-214AC (SMA) Standard 1A 1.3V @ 1A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C 8.5pF @ 4V, 1MHz
RGF1A
RFQ
VIEW
RFQ
3,881
In-stock
ON Semiconductor DIODE GEN PURP 50V 1A SMA - Active Cut Tape (CT) Surface Mount DO-214AC, SMA SMA (DO-214AC) Standard 1A 1.3V @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C 8.5pF @ 4V, 1MHz
RGF1J
RFQ
VIEW
RFQ
3,629
In-stock
ON Semiconductor DIODE GEN PURP 600V 1A DO214AC - Active Cut Tape (CT) Surface Mount DO-214AC, SMA DO-214AC (SMA) Standard 1A 1.3V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 250ns -65°C ~ 175°C 8.5pF @ 4V, 1MHz
RGF1B
RFQ
VIEW
RFQ
680
In-stock
ON Semiconductor DIODE GEN PURP 100V 1A DO214AC - Active Cut Tape (CT) Surface Mount DO-214AC, SMA DO-214AC (SMA) Standard 1A 1.3V @ 1A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C 8.5pF @ 4V, 1MHz
RGF1G
RFQ
VIEW
RFQ
1,174
In-stock
ON Semiconductor DIODE GEN PURP 400V 1A DO214AC - Active Cut Tape (CT) Surface Mount DO-214AC, SMA DO-214AC (SMA) Standard 1A 1.3V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C 8.5pF @ 4V, 1MHz
RGF1M
RFQ
VIEW
RFQ
3,937
In-stock
ON Semiconductor DIODE GEN PURP 1KV 1A SMA - Active Cut Tape (CT) Surface Mount DO-214AC, SMA SMA (DO-214AC) Standard 1A 1.3V @ 1A 5µA @ 1000V 1000V Fast Recovery = 200mA (Io) 500ns -65°C ~ 175°C 8.5pF @ 4V, 1MHz
RGF1K
RFQ
VIEW
RFQ
2,018
In-stock
ON Semiconductor DIODE GEN PURP 800V 1A SMA - Active Cut Tape (CT) Surface Mount DO-214AC, SMA SMA (DO-214AC) Standard 1A 1.3V @ 1A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 500ns -65°C ~ 175°C 8.5pF @ 4V, 1MHz