Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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SURA8130T3G
RFQ
VIEW
RFQ
3,215
In-stock
ON Semiconductor DIODE GEN PURP 300V 1A SMA - Active Cut Tape (CT) Surface Mount DO-214AC, SMA SMA Standard 1A 1.1V @ 1A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 65ns -65°C ~ 175°C -
ES1F R3G
RFQ
VIEW
RFQ
1,915
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 1A DO214AC - Active Cut Tape (CT) Surface Mount DO-214AC, SMA DO-214AC (SMA) Standard 1A 1.3V @ 1A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 18pF @ 4V, 1MHz
MURA130T3G
RFQ
VIEW
RFQ
3,519
In-stock
ON Semiconductor DIODE GEN PURP 300V 2A SMA - Active Cut Tape (CT) Surface Mount DO-214AC, SMA SMA Standard 2A 1.1V @ 1A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 65ns -65°C ~ 175°C -
US2FA
RFQ
VIEW
RFQ
2,690
In-stock
ON Semiconductor DIODE GP 300V 1.5A DO214AC Automotive, AEC-Q101 Active Cut Tape (CT) Surface Mount DO-214AC, SMA SMA (DO-214AC) Standard 1.5A 1V @ 1.5A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 50pF @ 4V, 1MHz
HS2FA R3G
RFQ
VIEW
RFQ
3,786
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 1.5A DO214AC - Active Cut Tape (CT) Surface Mount DO-214AC, SMA DO-214AC (SMA) Standard 1.5A 1V @ 1.5A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 50pF @ 4V, 1MHz
MURA230T3G
RFQ
VIEW
RFQ
1,794
In-stock
ON Semiconductor DIODE GEN PURP 300V 2A SMA - Active Cut Tape (CT) Surface Mount DO-214AC, SMA SMA Standard 2A 1.3V @ 2A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 65ns -65°C ~ 175°C -
ES1F
RFQ
VIEW
RFQ
689
In-stock
ON Semiconductor DIODE GEN PURP 300V 1A SMA - Active Cut Tape (CT) Surface Mount DO-214AC, SMA SMA (DO-214AC) Standard 1A 1.3V @ 1A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns 150°C (Max) 10pF @ 4V, 1MHz