- Series :
- Package / Case :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
2,281
In-stock
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NXP USA Inc. | DIODE GEN PURP 1.5KV 12A TO220AC | - | Obsolete | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 12A (DC) | 1.3V @ 6.5A | - | 1500V | Fast Recovery = 200mA (Io) | 350ns | 150°C (Max) | - | |||
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VIEW |
1,531
In-stock
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NXP USA Inc. | DIODE GEN PURP 1.5KV 12A TO220F | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Standard | 12A (DC) | 1.3V @ 6.5A | 250µA @ 1300V | 1500V | Fast Recovery = 200mA (Io) | 350ns | 150°C (Max) | - | |||
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VIEW |
2,695
In-stock
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Global Power Technologies Group | DIODE SCHOTTKY 600V 12A TO220-2 | Amp+™ | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 135°C | 487pF @ 1V, 1MHz | |||
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VIEW |
1,646
In-stock
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Infineon Technologies | DIODE SCHOTTKY 600V 12A TO220-2 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 400µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 450pF @ 1V, 1MHz |