Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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APT20SCD120B
RFQ
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RFQ
2,103
In-stock
Microsemi Corporation DIODE SCHOTTKY 1.2KV 68A - Obsolete - - - - Silicon Carbide Schottky 68A (DC) 1.8V @ 20A 400µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 150°C 1135pF @ 0V, 1MHz
APT20SCD120S
RFQ
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RFQ
3,173
In-stock
Microsemi Corporation DIODE SCHOTTKY 1.2KV 68A D3PAK - Obsolete Tube Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA D3Pak Silicon Carbide Schottky 68A (DC) 1.8V @ 20A 400µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 150°C 1135pF @ 0V, 1MHz
APT20SCD65K
RFQ
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RFQ
3,362
In-stock
Microsemi Corporation DIODE SILICON 650V 32A TO220 - Obsolete Bulk Through Hole TO-220-2 TO-220 [K] Silicon Carbide Schottky 32A 1.8V @ 20A 400µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 150°C 680pF @ 100mV, 1MHz
BY359X-1500,127
RFQ
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RFQ
3,297
In-stock
NXP USA Inc. DIODE GEN PURP 1.5KV 10A TO220F - Obsolete Tube Through Hole TO-220-2 Full Pack, Isolated Tab TO-220FP Standard 10A (DC) 1.8V @ 20A 100µA @ 1300V 1500V Standard Recovery >500ns, > 200mA (Io) 600ns 150°C (Max) -
BY359-1500,127
RFQ
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RFQ
1,221
In-stock
NXP USA Inc. DIODE GEN PURP 1.5KV 10A TO220AC - Obsolete Tube Through Hole TO-220-2 TO-220AC Standard 10A (DC) 1.8V @ 20A 100µA @ 1300V 1500V Standard Recovery >500ns, > 200mA (Io) 600ns 150°C (Max) -