Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
1N4936
RFQ
VIEW
RFQ
1,238
In-stock
ON Semiconductor DIODE GEN PURP 400V 1A DO41 - Obsolete Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.2V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 150ns -50°C ~ 150°C 12pF @ 4V, 1MHz
1N4004
RFQ
VIEW
RFQ
2,379
In-stock
Micro Commercial Co DIODE GEN PURP 400V 1A DO41 - Obsolete Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.1V @ 1A 5µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) 2µs -55°C ~ 150°C -
EGP10G-TP
RFQ
VIEW
RFQ
2,016
In-stock
Micro Commercial Co DIODE GEN PURP 400V 1A DO41 - Obsolete Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.25V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
1N4004 TR
RFQ
VIEW
RFQ
3,361
In-stock
Central Semiconductor Corp DIODE GEN PURP 400V 1A DO41 - Obsolete Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.1V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) - -65°C ~ 175°C -
1N4936RL
RFQ
VIEW
RFQ
2,222
In-stock
ON Semiconductor DIODE GEN PURP 400V 1A DO41 - Obsolete Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.2V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 300ns -65°C ~ 150°C -
HER105-T
RFQ
VIEW
RFQ
1,274
In-stock
Diodes Incorporated DIODE GEN PURP 400V 1A DO41 - Obsolete Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.1V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -65°C ~ 150°C -
STTH1R04RL
RFQ
VIEW
RFQ
2,199
In-stock
STMicroelectronics DIODE GEN PURP 400V 1A DO41 - Obsolete Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.5V @ 1A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 30ns 175°C (Max) -