Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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EGP10J
RFQ
VIEW
RFQ
733
In-stock
ON Semiconductor DIODE GEN PURP 600V 1A DO41 - Obsolete Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.7V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns -65°C ~ 150°C -
1N4005
RFQ
VIEW
RFQ
3,474
In-stock
Micro Commercial Co DIODE GEN PURP 600V 1A DO41 - Obsolete Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.1V @ 1A 5µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 2µs -55°C ~ 150°C -
STTH106
RFQ
VIEW
RFQ
2,588
In-stock
STMicroelectronics DIODE GEN PURP 600V 1A DO41 - Obsolete Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.7V @ 1A 1µA @ 600V 600V Fast Recovery = 200mA (Io) 45ns 175°C (Max) -
1N4937RL
RFQ
VIEW
RFQ
1,703
In-stock
ON Semiconductor DIODE GEN PURP 600V 1A DO41 - Obsolete Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.2V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 300ns -65°C ~ 150°C -
UF4005 TR
RFQ
VIEW
RFQ
1,728
In-stock
Central Semiconductor Corp DIODE GEN PURP 600V 1A DO41 - Obsolete Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.7V @ 1A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns -65°C ~ 150°C 10pF @ 4V, 1MHz
MUR160-TP
RFQ
VIEW
RFQ
1,604
In-stock
Micro Commercial Co DIODE GEN PURP 600V 1A DO41 - Obsolete Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.35V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 60ns -55°C ~ 150°C 20pF @ 4V, 1MHz
1N4937-TP
RFQ
VIEW
RFQ
2,537
In-stock
Micro Commercial Co DIODE GEN PURP 600V 1A DO41 - Obsolete Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.3V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 15pF @ 4V, 1MHz