- Package / Case :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
1,273
In-stock
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Microsemi Corporation | DIODE SIC 650V 46A TO247 | - | Obsolete | Bulk | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 46A | 1.8V @ 30A | 600µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 945pF @ 1V, 1MHz | |||
|
VIEW |
3,311
In-stock
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Microsemi Corporation | DIODE SCHOTTKY 1700V 10A TO247 | - | Obsolete | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 23A (DC) | 1.8V @ 10A | 200µA @ 1700V | 1700V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1120pF @ 0V, 1MHz | |||
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|
VIEW |
1,098
In-stock
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Microsemi Corporation | DIODE SCHOTTKY 1200V 10A TO247 | - | Obsolete | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 43A (DC) | 1.8V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 630pF @ 1V, 1MHz | |||
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|
VIEW |
3,012
In-stock
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Microsemi Corporation | DIODE SCHOTTKY 1.2KV 99A | - | Obsolete | Tube | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 99A (DC) | 1.8V @ 30A | 600µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 2100pF @ 0V, 1MHz | |||
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|
VIEW |
1,653
In-stock
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Microsemi Corporation | DIODE GEN PURP 300V 60A TO247 | - | Obsolete | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 60A | 1.4V @ 60A | 250µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 38ns | -55°C ~ 175°C | - | |||
|
VIEW |
1,328
In-stock
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ON Semiconductor | DIODE GEN PURP 1.2KV 30A TO247 | - | Obsolete | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 30A | 2.1V @ 30A | 250µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 150ns | -65°C ~ 175°C | - | |||
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|
VIEW |
1,962
In-stock
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ON Semiconductor | DIODE GEN PURP 1KV 30A TO247 | - | Obsolete | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 30A | 1.8V @ 30A | 250µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 150ns | - | - | |||
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|
VIEW |
1,310
In-stock
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Microsemi Corporation | DIODE SCHOTTKY 1.2KV 36A TO247 | - | Obsolete | Tube | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 36A (DC) | 1.8V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 600pF @ 0V, 1MHz | |||
|
VIEW |
2,541
In-stock
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STMicroelectronics | DIODE GEN PURP 600V 50A TO247 | - | Obsolete | Tube | Through Hole | TO-247-3 | TO-247 | Standard | 50A | 2.4V @ 50A | 50µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 45ns | 175°C (Max) | - | |||
