- Packaging :
- Package / Case :
- Supplier Device Package :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
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4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
1,374
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 8A TO263AB | - | Discontinued at Digi-Key | Tube | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | Standard | 8A | 1.1V @ 8A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 55pF @ 4V, 1MHz | |||
|
VIEW |
3,871
In-stock
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 800V 1.8A TO277A | eSMP® | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Avalanche | 1.8A (DC) | 1.9V @ 4A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 120ns | -55°C ~ 175°C | 55pF @ 4V, 1MHz | |||
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|
VIEW |
2,099
In-stock
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Vishay Semiconductor Diodes Division | DIODE AVALANCHE 800V 1.8A TO277A | eSMP® | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Avalanche | 1.8A (DC) | 1.9V @ 4A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 120ns | -55°C ~ 175°C | 55pF @ 4V, 1MHz | |||
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|
VIEW |
1,139
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 8A TO263AB | - | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | Standard | 8A | 1.1V @ 8A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 55pF @ 4V, 1MHz | |||
