Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
1N5803
RFQ
VIEW
RFQ
3,548
In-stock
Microsemi Corporation DIODE GEN PURP 75V 1A AXIAL - Discontinued at Digi-Key Bulk Through Hole A, Axial - Standard 1A 875mV @ 1A 1µA @ 75V 75V Fast Recovery = 200mA (Io) 25ns -65°C ~ 175°C 25pF @ 10V, 1MHz
1N5621
RFQ
VIEW
RFQ
2,077
In-stock
Microsemi Corporation DIODE GEN PURP 800V 1A AXIAL - Discontinued at Digi-Key Bulk Through Hole A, Axial - Standard 1A 1.6V @ 3A 500nA @ 800V 800V Fast Recovery = 200mA (Io) 300ns -65°C ~ 175°C 20pF @ 12V, 1MHz
1N4944
RFQ
VIEW
RFQ
1,312
In-stock
Microsemi Corporation DIODE GEN PURP 400V 1A AXIAL - Discontinued at Digi-Key Bulk Through Hole A, Axial - Standard 1A 1.3V @ 1A 1µA @ 400V 400V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C 35pF @ 12V, 1MHz
1N3957
RFQ
VIEW
RFQ
2,866
In-stock
Microsemi Corporation DIODE GEN PURP 1KV 1A AXIAL - Discontinued at Digi-Key Bulk Through Hole A, Axial - Standard 1A 1.1V @ 1A 1µA @ 1000V 1000V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
1N3614
RFQ
VIEW
RFQ
1,544
In-stock
Microsemi Corporation DIODE GEN PURP 800V 1A AXIAL - Discontinued at Digi-Key Bulk Through Hole A, Axial - Standard 1A 1.1V @ 1A 1µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
1N3612
RFQ
VIEW
RFQ
2,432
In-stock
Microsemi Corporation DIODE GEN PURP 400V 1A AXIAL - Discontinued at Digi-Key Bulk Through Hole A, Axial - Standard 1A 1.1V @ 1A 1µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
MUR160-T
RFQ
VIEW
RFQ
3,249
In-stock
Diodes Incorporated DIODE GEN PURP 600V 1A DO41 - Discontinued at Digi-Key Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.25V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns -65°C ~ 175°C -