Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction
GLOBAL STOCKS
MBR10200 C0G
RFQ
VIEW
RFQ
1,719
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 10A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 10A 1.05V @ 10A 100µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C
VS-10ETF02-M3
RFQ
VIEW
RFQ
1,919
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 10A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 10A 1.2V @ 10A 100µA @ 200V 200V Fast Recovery = 200mA (Io) 200ns -40°C ~ 150°C
MBR10200HC0G
RFQ
VIEW
RFQ
1,032
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 10A TO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 TO-220AC Standard 10A 1.05V @ 10A 100µA @ 200V 200V Fast Recovery = 200mA (Io) - -55°C ~ 150°C
10ETF02
RFQ
VIEW
RFQ
3,984
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 10A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 10A 1.2V @ 10A 100µA @ 200V 200V Fast Recovery = 200mA (Io) 145ns -40°C ~ 150°C