Reverse Recovery Time (trr) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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10A06-T
RFQ
VIEW
RFQ
1,759
In-stock
Diodes Incorporated DIODE GEN PURP 800V 10A R6 - Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 10A 1V @ 10A 10µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 150°C 80pF @ 4V, 1MHz
SF2008GHC0G
RFQ
VIEW
RFQ
3,707
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 1.7V @ 10A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF2007GHC0G
RFQ
VIEW
RFQ
781
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 1.7V @ 10A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF2006GHC0G
RFQ
VIEW
RFQ
2,533
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 1.3V @ 10A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF2005GHC0G
RFQ
VIEW
RFQ
999
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 1.3V @ 10A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF2004GHC0G
RFQ
VIEW
RFQ
2,739
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 975mV @ 10A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF2003GHC0G
RFQ
VIEW
RFQ
1,401
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 975mV @ 10A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF2002GHC0G
RFQ
VIEW
RFQ
3,776
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 975mV @ 10A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF2001GHC0G
RFQ
VIEW
RFQ
1,167
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 20A TO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 TO-220AB Standard 20A 975mV @ 10A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SFF1604GHC0G
RFQ
VIEW
RFQ
2,414
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 16A ITO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220AB Standard 16A 975mV @ 8A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SFF1603GHC0G
RFQ
VIEW
RFQ
3,295
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 16A ITO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220AB Standard 16A 975mV @ 8A 10µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SFF1602GHC0G
RFQ
VIEW
RFQ
1,466
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 16A ITO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220AB Standard 16A 975mV @ 8A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SFF1601GHC0G
RFQ
VIEW
RFQ
2,815
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 16A ITO220AB Automotive, AEC-Q101 Active Tube Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220AB Standard 16A 975mV @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
HERAF805G C0G
RFQ
VIEW
RFQ
3,075
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 8A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 8A 1.3V @ 8A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
HERAF804G C0G
RFQ
VIEW
RFQ
3,133
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 8A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 8A 1V @ 8A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
HERAF803G C0G
RFQ
VIEW
RFQ
3,784
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 8A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 8A 1V @ 8A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
HERAF802G C0G
RFQ
VIEW
RFQ
3,640
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 8A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 8A 1V @ 8A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
HERAF801G C0G
RFQ
VIEW
RFQ
620
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 8A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 8A 1V @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF46GHB0G
RFQ
VIEW
RFQ
3,735
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.3V @ 4A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF45GHB0G
RFQ
VIEW
RFQ
1,310
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 4A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.3V @ 4A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF46GHA0G
RFQ
VIEW
RFQ
2,529
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.3V @ 4A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF45GHA0G
RFQ
VIEW
RFQ
2,734
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 4A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.3V @ 4A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF46GHR0G
RFQ
VIEW
RFQ
3,355
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.3V @ 4A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF45GHR0G
RFQ
VIEW
RFQ
3,282
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 4A DO201AD Automotive, AEC-Q101 Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.3V @ 4A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,486
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1.3V @ 6A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,843
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,083
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,881
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,718
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,760
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 6A R-6 - Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1.3V @ 6A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz