Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Operating Temperature - Junction Capacitance @ Vr, F
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1N5401GHB0G
RFQ
VIEW
RFQ
1,915
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5400GHB0G
RFQ
VIEW
RFQ
1,322
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5408GHB0G
RFQ
VIEW
RFQ
1,142
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 1000V - Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5407GHB0G
RFQ
VIEW
RFQ
2,733
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5406GHB0G
RFQ
VIEW
RFQ
3,974
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5404GHB0G
RFQ
VIEW
RFQ
2,113
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5402GHB0G
RFQ
VIEW
RFQ
3,130
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5408G B0G
RFQ
VIEW
RFQ
1,173
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 1000V - Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5407G B0G
RFQ
VIEW
RFQ
2,952
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5406G B0G
RFQ
VIEW
RFQ
930
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5404G B0G
RFQ
VIEW
RFQ
2,632
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5402G B0G
RFQ
VIEW
RFQ
1,611
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5401G B0G
RFQ
VIEW
RFQ
3,283
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5400G B0G
RFQ
VIEW
RFQ
1,659
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 50V 50V Standard Recovery >500ns, > 200mA (Io) -55°C ~ 150°C 25pF @ 4V, 1MHz