Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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FR206G B0G
RFQ
VIEW
RFQ
3,360
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 2A DO204AC - Active Bulk Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 2A 1.3V @ 2A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 500ns -55°C ~ 150°C 10pF @ 4V, 1MHz
HER107G B0G
RFQ
VIEW
RFQ
2,675
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A DO204AL - Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.7V @ 1A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 10pF @ 4V, 1MHz
FR106G B0G
RFQ
VIEW
RFQ
2,564
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A DO204AL - Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.3V @ 1A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 500ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4006GHB0G
RFQ
VIEW
RFQ
2,018
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A DO204AL Automotive, AEC-Q101 Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1V @ 1A 5µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4006G B0G
RFQ
VIEW
RFQ
3,947
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A DO204AL - Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1V @ 1A 5µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 10pF @ 4V, 1MHz