Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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UF1KHB0G
RFQ
VIEW
RFQ
1,767
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A DO204AL Automotive, AEC-Q101 Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.7V @ 1A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 17pF @ 4V, 1MHz
UF4006HB0G
RFQ
VIEW
RFQ
3,895
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A DO204AL Automotive, AEC-Q101 Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.7V @ 1A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 17pF @ 4V, 1MHz
FR156G B0G
RFQ
VIEW
RFQ
3,213
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1.5A DO204AC - Active Bulk Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 1.5A 1.3V @ 1.5A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 500ns -55°C ~ 150°C 20pF @ 4V, 1MHz
1N5398GHB0G
RFQ
VIEW
RFQ
740
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1.5A DO204AC Automotive, AEC-Q101 Active Bulk Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 1.5A 1V @ 1.5A 5µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 15pF @ 4V, 1MHz
FR306G B0G
RFQ
VIEW
RFQ
3,686
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.3V @ 3A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 500ns -55°C ~ 150°C 30pF @ 4V, 1MHz
HER207G B0G
RFQ
VIEW
RFQ
2,832
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 2A DO204AC - Active Bulk Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 2A 1.7V @ 2A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 20pF @ 4V, 1MHz
1N5407GHB0G
RFQ
VIEW
RFQ
2,733
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 3A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5407G B0G
RFQ
VIEW
RFQ
2,952
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
HER157G B0G
RFQ
VIEW
RFQ
3,332
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1.5A DO204AC - Active Bulk Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 1.5A 1V @ 1.5A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 20pF @ 4V, 1MHz
FR206G B0G
RFQ
VIEW
RFQ
3,360
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 2A DO204AC - Active Bulk Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 2A 1.3V @ 2A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 500ns -55°C ~ 150°C 10pF @ 4V, 1MHz
FR156GHB0G
RFQ
VIEW
RFQ
2,733
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1.5A DO204AC Automotive, AEC-Q101 Active Bulk Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 1.5A 1.3V @ 1.5A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 500ns -55°C ~ 150°C 20pF @ 4V, 1MHz
2A06G B0G
RFQ
VIEW
RFQ
2,201
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 2A DO204AC - Active Bulk Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 2A 1V @ 2A 5µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 15pF @ 4V, 1MHz
2A06GHB0G
RFQ
VIEW
RFQ
1,713
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 2A DO204AC Automotive, AEC-Q101 Active Bulk Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 2A 1V @ 2A 5µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 15pF @ 4V, 1MHz
UF4006 B0G
RFQ
VIEW
RFQ
2,279
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A DO204AL - Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.7V @ 1A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 17pF @ 4V, 1MHz
1N5398G B0G
RFQ
VIEW
RFQ
1,544
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1.5A DO204AC - Active Bulk Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 1.5A 1V @ 1.5A 5µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 15pF @ 4V, 1MHz
UF1K B0G
RFQ
VIEW
RFQ
1,026
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A DO204AL - Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.7V @ 1A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 17pF @ 4V, 1MHz
HER107G B0G
RFQ
VIEW
RFQ
2,675
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A DO204AL - Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.7V @ 1A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4006B-G
RFQ
VIEW
RFQ
1,221
In-stock
Comchip Technology DIODE GEN PURP 800V 1A DO41 - Active Bulk Through Hole DO-204AL, DO-41, Axial DO-41 Standard 1A 1.1V @ 1A 5µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 15pF @ 4V, 1MHz
FR106G B0G
RFQ
VIEW
RFQ
2,564
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A DO204AL - Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1.3V @ 1A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 500ns -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4006GHB0G
RFQ
VIEW
RFQ
2,018
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A DO204AL Automotive, AEC-Q101 Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1V @ 1A 5µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 10pF @ 4V, 1MHz
1N4006G B0G
RFQ
VIEW
RFQ
3,947
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A DO204AL - Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1V @ 1A 5µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 10pF @ 4V, 1MHz