Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
3,719
In-stock
Semtech Corporation DIODE GEN PURP 400V 2.1A AXIAL - Active Bulk Through Hole Axial Axial Standard 2.1A 1.25V @ 1A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 25pF @ 5V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,486
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1.3V @ 6A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
HER305G B0G
RFQ
VIEW
RFQ
3,545
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.3V @ 3A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 60pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,327
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 6A R-6 Automotive, AEC-Q101 Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
3,822
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 60pF @ 4V, 1MHz
UES1106
RFQ
VIEW
RFQ
3,819
In-stock
Microsemi Corporation DIODE GEN PURP 400V 1A AXIAL - Active Bulk Through Hole A, Axial - Standard 1A 1.25V @ 1A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -