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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Mounting Type	Package / Case	Supplier Device Package	Diode Type	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Speed	Reverse Recovery Time (trr)	Operating Temperature - Junction	Capacitance @ Vr, F
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	HER304G B0G	RFQ VIEW	PDF RFQ	654 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO201AD		-	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1V @ 3A	10µA @ 300V	300V	Fast Recovery = 200mA (Io)	50ns	-55°C ~ 150°C	60pF @ 4V, 1MHz
	HER303G B0G	RFQ VIEW	PDF RFQ	1,445 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO201AD		-	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1V @ 3A	10µA @ 200V	200V	Fast Recovery = 200mA (Io)	50ns	-55°C ~ 150°C	60pF @ 4V, 1MHz
	HER302G B0G	RFQ VIEW	PDF RFQ	2,000 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO201AD		-	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1V @ 3A	10µA @ 100V	100V	Fast Recovery = 200mA (Io)	50ns	-55°C ~ 150°C	60pF @ 4V, 1MHz
	HER301G B0G	RFQ VIEW	PDF RFQ	3,084 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO201AD		-	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1V @ 3A	10µA @ 50V	50V	Fast Recovery = 200mA (Io)	50ns	-55°C ~ 150°C	60pF @ 4V, 1MHz
	1N5408GHB0G	RFQ VIEW	PDF RFQ	1,142 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO201AD		Automotive, AEC-Q101	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1V @ 3A	5µA @ 1000V	-	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	25pF @ 4V, 1MHz
	1N5407GHB0G	RFQ VIEW	PDF RFQ	2,733 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO201AD		Automotive, AEC-Q101	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1V @ 3A	5µA @ 800V	800V	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	25pF @ 4V, 1MHz
	1N5406GHB0G	RFQ VIEW	PDF RFQ	3,974 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD		Automotive, AEC-Q101	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1V @ 3A	5µA @ 600V	600V	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	25pF @ 4V, 1MHz
	1N5404GHB0G	RFQ VIEW	PDF RFQ	2,113 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD		Automotive, AEC-Q101	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1V @ 3A	5µA @ 400V	400V	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	25pF @ 4V, 1MHz
	1N5402GHB0G	RFQ VIEW	PDF RFQ	3,130 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO201AD		Automotive, AEC-Q101	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1V @ 3A	5µA @ 200V	200V	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	25pF @ 4V, 1MHz
	1N5408G B0G	RFQ VIEW	PDF RFQ	1,173 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO201AD		-	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1V @ 3A	5µA @ 1000V	-	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	25pF @ 4V, 1MHz
	1N5407G B0G	RFQ VIEW	PDF RFQ	2,952 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO201AD		-	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1V @ 3A	5µA @ 800V	800V	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	25pF @ 4V, 1MHz
	1N5406G B0G	RFQ VIEW	PDF RFQ	930 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD		-	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1V @ 3A	5µA @ 600V	600V	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	25pF @ 4V, 1MHz
	1N5404G B0G	RFQ VIEW	PDF RFQ	2,632 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD		-	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1V @ 3A	5µA @ 400V	400V	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	25pF @ 4V, 1MHz
	1N5402G B0G	RFQ VIEW	PDF RFQ	1,611 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO201AD		-	Active	Bulk	Through Hole	DO-201AD, Axial	DO-201AD	Standard	3A	1V @ 3A	5µA @ 200V	200V	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	25pF @ 4V, 1MHz

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