- Series :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
-
- 10µA @ 1000V (2)
- 10µA @ 100V (3)
- 10µA @ 200V (3)
- 10µA @ 300V (1)
- 10µA @ 400V (3)
- 10µA @ 50V (3)
- 10µA @ 600V (3)
- 10µA @ 800V (2)
- 2µA @ 16000V (3)
- 2µA @ 20000V (2)
- 2µA @ 24000V (2)
- 2µA @ 8000V (2)
- 4µA @ 10000V (1)
- 4µA @ 12000V (1)
- 4µA @ 16000V (1)
- 5µA @ 100V (2)
- 5µA @ 150V (2)
- 5µA @ 200V (2)
- 5µA @ 300V (2)
- 5µA @ 400V (2)
- 5µA @ 500V (2)
- 5µA @ 50V (2)
- 5µA @ 600V (2)
- Voltage - DC Reverse (Vr) (Max) :
- Capacitance @ Vr, F :
- Applied Filters :
48 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
2,817
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
|
VIEW |
1,128
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 6A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
VIEW |
3,182
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.7V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 65pF @ 4V, 1MHz | |||
|
|
VIEW |
1,486
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.3V @ 6A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
2,843
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
1,083
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
2,881
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
2,718
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
2,147
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
|
VIEW |
2,972
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 6A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
|
VIEW |
607
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
|
VIEW |
2,264
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
|
VIEW |
1,617
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
3,157
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
|
VIEW |
1,820
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
|
VIEW |
3,481
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
1,030
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.3V @ 6A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
|
VIEW |
2,512
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 6A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.3V @ 6A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
|
VIEW |
1,614
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
|
VIEW |
1,788
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 6A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
|
VIEW |
796
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.3V @ 6A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
|
VIEW |
2,622
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 6A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.3V @ 6A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
|
VIEW |
2,121
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
663
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
1,327
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 400V | 400V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
629
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
1,878
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 100V | 100V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
1,028
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
3,133
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
1,722
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
