- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | ||||||||||||||||||||||
VIEW |
1,767
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A DO204AL | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.7V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 17pF @ 4V, 1MHz | ||||
VIEW |
3,895
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A DO204AL | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1.7V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 17pF @ 4V, 1MHz | ||||
VIEW |
2,121
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
740
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1.5A DO204AC | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 1.5A | 1V @ 1.5A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 15pF @ 4V, 1MHz | ||||
VIEW |
2,733
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 3A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 25pF @ 4V, 1MHz | ||||
VIEW |
2,733
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1.5A DO204AC | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 1.5A | 1.3V @ 1.5A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | ||||
VIEW |
1,713
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 2A DO204AC | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 1V @ 2A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 15pF @ 4V, 1MHz | ||||
VIEW |
2,018
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A DO204AL | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 1V @ 1A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 10pF @ 4V, 1MHz |