Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
UG2C-E3/73
RFQ
VIEW
RFQ
1,502
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 150V 2A DO204AC - Active Tape & Box (TB) Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 2A 950mV @ 2A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 25ns -55°C ~ 150°C -
SBYV27-150-E3/73
RFQ
VIEW
RFQ
2,581
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 150V 2A DO204AC - Active Tape & Box (TB) Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 2A 1.07V @ 3A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 15ns -55°C ~ 150°C 15pF @ 4V, 1MHz
SR215HA0G
RFQ
VIEW
RFQ
1,105
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 2A DO204AC Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Schottky 2A 950mV @ 2A 100µA @ 150V 150V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SF23G A0G
RFQ
VIEW
RFQ
1,818
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 2A DO204AC - Active Tape & Box (TB) Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 2A 950mV @ 2A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 40pF @ 4V, 1MHz
SF23GHA0G
RFQ
VIEW
RFQ
2,302
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 2A DO204AC Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 2A 950mV @ 2A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 40pF @ 4V, 1MHz
SR215 A0G
RFQ
VIEW
RFQ
2,060
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 2A DO204AC - Active Tape & Box (TB) Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Schottky 2A 950mV @ 2A 100µA @ 150V 150V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -