Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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P600J-E3/73
RFQ
VIEW
RFQ
3,337
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 6A P600 - Active Cut Tape (CT) Through Hole P600, Axial P600 Standard 6A 900mV @ 6A 5µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 2.5µs -55°C ~ 150°C 150pF @ 4V, 1MHz
UF5406-E3/73
RFQ
VIEW
RFQ
3,180
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 36pF @ 4V, 1MHz
SF26G A0G
RFQ
VIEW
RFQ
2,510
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 2A DO204AC - Active Cut Tape (CT) Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 2A 1.3V @ 2A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 20pF @ 4V, 1MHz
RMPG06JHE3_A/54
RFQ
VIEW
RFQ
1,373
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A MPG06 - Active Cut Tape (CT) Through Hole MPG06, Axial MPG06 Standard 1A 1.3V @ 1A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C 6.6pF @ 4V, 1MHz
UF4001-E3/54
RFQ
VIEW
RFQ
1,221
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 1A DO204AL - Active Cut Tape (CT) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard 1A 1V @ 1A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 17pF @ 4V, 1MHz
MPG06GHE3_A/73
RFQ
VIEW
RFQ
3,054
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 1A MPG06 - Active Cut Tape (CT) Through Hole MPG06, Axial MPG06 Standard 1A 1.1V @ 1A 5µA @ 400V 400V Standard Recovery >500ns, > 200mA (Io) 600ns -55°C ~ 150°C 10pF @ 4V, 1MHz
UF5408-E3/54
RFQ
VIEW
RFQ
3,889
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 10µA @ 1000V 1000V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 36pF @ 4V, 1MHz
UF5406-E3/54
RFQ
VIEW
RFQ
1,473
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 36pF @ 4V, 1MHz
BY255P-E3/54
RFQ
VIEW
RFQ
2,608
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.3KV 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 1300V 1300V Standard Recovery >500ns, > 200mA (Io) 3µs -55°C ~ 150°C 40pF @ 4V, 1MHz
UF5402-E3/54
RFQ
VIEW
RFQ
743
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 45pF @ 4V, 1MHz
UF5400-E3/54
RFQ
VIEW
RFQ
1,700
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 45pF @ 4V, 1MHz
SF68G A0G
RFQ
VIEW
RFQ
2,636
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 6A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 6A 1.7V @ 6A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
SF66G A0G
RFQ
VIEW
RFQ
1,545
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 6A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 6A 1.3V @ 6A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 50pF @ 4V, 1MHz
SF64G A0G
RFQ
VIEW
RFQ
3,116
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SR806 A0G
RFQ
VIEW
RFQ
3,283
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 8A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Schottky 8A 700mV @ 8A 500µA @ 60V 60V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SF34G A0G
RFQ
VIEW
RFQ
3,435
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SR520 A0G
RFQ
VIEW
RFQ
930
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 5A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Schottky 5A 1.05V @ 5A 100µA @ 200V 200V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR515 A0G
RFQ
VIEW
RFQ
3,225
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 5A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Schottky 5A 1.05V @ 5A 100µA @ 150V 150V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR506 A0G
RFQ
VIEW
RFQ
1,892
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 5A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Schottky 5A 700mV @ 5A 500µA @ 60V 60V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR504 A0G
RFQ
VIEW
RFQ
3,746
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 5A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Schottky 5A 550mV @ 5A 500µA @ 40V 40V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
HER305G A0G
RFQ
VIEW
RFQ
2,590
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.3V @ 3A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF38G A0G
RFQ
VIEW
RFQ
2,398
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF36G A0G
RFQ
VIEW
RFQ
2,438
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.3V @ 3A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SR320 A0G
RFQ
VIEW
RFQ
1,748
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Schottky 3A 950mV @ 3A 100µA @ 200V 200V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR315 A0G
RFQ
VIEW
RFQ
2,754
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Schottky 3A 850mV @ 3A 100µA @ 150V 150V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
1N5408G A0G
RFQ
VIEW
RFQ
1,122
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 1000V 1000V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
SR310 A0G
RFQ
VIEW
RFQ
3,489
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Schottky 3A 850mV @ 3A 100µA @ 100V 100V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR306 A0G
RFQ
VIEW
RFQ
2,715
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Schottky 3A 700mV @ 3A 500µA @ 60V 60V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR304 A0G
RFQ
VIEW
RFQ
3,175
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Schottky 3A 550mV @ 3A 500µA @ 40V 40V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
1N5407G A0G
RFQ
VIEW
RFQ
1,197
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 3A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz