- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
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12 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GLOBAL STOCKS | ||||||||||||||||||||||
VIEW |
682
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
2,748
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO214AB | - | Active | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | - | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
3,952
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3A DO214AB | - | Active | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 1.15V @ 2.5A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
2,822
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3A DO214AB | - | Active | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 1.15V @ 2.5A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
1,079
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GPP 3A 50V DO-214AB | - | Active | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 1.15V @ 2.5A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
3,084
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
2,427
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
1,877
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO214AB | - | Active | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | - | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
2,241
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3A DO214AB | - | Active | Digi-Reel® | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 1.15V @ 2.5A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
2,378
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3A DO214AB | - | Active | Cut Tape (CT) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 1.15V @ 2.5A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
3,900
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3A DO214AB | - | Active | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 1.15V @ 2.5A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
2,229
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3A DO214AB | - | Active | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | Standard | 3A | 1.15V @ 2.5A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | 60pF @ 4V, 1MHz |