- Series :
- Mounting Type :
- Diode Type :
- Current - Average Rectified (Io) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
-
- 1400pF @ 0V, 1MHz (1)
- 140pF @ 4V, 1MHz (4)
- 150pF @ 0V, 1MHz (3)
- 28pF @ 600V, 1MHz (1)
- 290pF @ 1V, 1MHz (1)
- 300pF @ 1V, 1MHz (8)
- 325pF @ 1V, 1MHz (1)
- 42pF @ 4V, 1MHz (3)
- 500pF @ 1V, 1MHz (5)
- 50pF @ 0V, 1MHz (1)
- 50pF @ 4V, 1MHz (5)
- 60pF @ 4V, 1MHz (5)
- 690pF @ 0V, 1MHz (1)
- 710pF @ 0V, 1MHz (2)
- 780pF @ 0V, 1MHz (2)
- 80pF @ 4V, 1MHz (4)
- 90pF @ 4V, 1MHz (4)
- Applied Filters :
60 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
1,816
In-stock
|
WeEn Semiconductors | DIODE SCHOTTKY 650V 10A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 250µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 300pF @ 1V, 1MHz | |||
|
|
VIEW |
2,666
In-stock
|
WeEn Semiconductors | DIODE SCHOTTKY 650V 10A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 250µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 300pF @ 1V, 1MHz | |||
|
|
VIEW |
2,302
In-stock
|
WeEn Semiconductors | DIODE SCHOTTKY 650V 10A D2PAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 250µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 300pF @ 1V, 1MHz | |||
|
|
VIEW |
1,015
In-stock
|
Renesas Electronics America | DIODE GEN PURP 360V 10A LDPAK | - | Active | Tape & Reel (TR) | Surface Mount | SC-83 | 4-LDPAK | Standard | 10A (DC) | 1.7V @ 10A | 1µA @ 360V | 360V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | - | |||
|
VIEW |
2,363
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
|
VIEW |
2,889
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 10A VSON-4 | thinQ!™ | Active | Tape & Reel (TR) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 300pF @ 1V, 1MHz | |||
|
VIEW |
3,840
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 20A ITO220AB | - | Active | Tube | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | Standard | 20A | 1.7V @ 10A | 10µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 90pF @ 4V, 1MHz | |||
,-TO-263AB.jpg)
|
VIEW |
3,429
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 10A TO263AB | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Standard | 10A | 1.7V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
3,707
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 20A TO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 1.7V @ 10A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
781
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 20A TO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 1.7V @ 10A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
VIEW |
2,352
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 10A ITO220AC | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-2 Full Pack | ITO-220AC | Standard | 10A | 1.7V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 140pF @ 4V, 1MHz | |||
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|
VIEW |
1,182
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 10A ITO220AC | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-2 Full Pack | ITO-220AC | Standard | 10A | 1.7V @ 10A | 10µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 140pF @ 4V, 1MHz | |||
|
|
VIEW |
835
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 10A ITO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | Standard | 10A | 1.7V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 0V, 1MHz | |||
|
VIEW |
1,519
In-stock
|
Central Semiconductor Corp | DIODE SCHOTTKY 650V 10A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Schottky | 10A | 1.7V @ 10A | 125µA @ 650V | 650V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 28pF @ 600V, 1MHz | |||
|
VIEW |
3,433
In-stock
|
Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 500pF @ 1V, 1MHz | |||
|
|
VIEW |
3,788
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 780pF @ 0V, 1MHz | |||
|
|
VIEW |
1,424
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 10A ITO220AC | - | Active | Tube | Through Hole | TO-220-2 Full Pack | ITO-220AC | Standard | 10A | 1.7V @ 10A | 10µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 140pF @ 4V, 1MHz | |||
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|
VIEW |
715
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 20A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 1.7V @ 10A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
3,112
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 20A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 1.7V @ 10A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
1,464
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 20A ITO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | Standard | 20A | 1.7V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 90pF @ 4V, 1MHz | |||
|
VIEW |
3,175
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 10A TO220AC | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 10A | 1.7V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
|
VIEW |
1,925
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 10A TO220AC | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 10A | 1.7V @ 10A | 10µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
|
VIEW |
846
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 10A TO263AB | - | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Standard | 10A | 1.7V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
3,133
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 20A ITO220AB | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | Standard | 20A | 1.7V @ 10A | 10µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 90pF @ 4V, 1MHz | |||
|
|
VIEW |
985
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 20A ITO220AB | - | Active | Tube | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | Standard | 20A | 1.7V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 90pF @ 4V, 1MHz | |||
|
|
VIEW |
1,578
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 10A ITO220AC | - | Active | Tube | Through Hole | TO-220-2 Full Pack | ITO-220AC | Standard | 10A | 1.7V @ 10A | 10µA @ 1000V | - | Fast Recovery = 200mA (Io) | 80ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
701
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 10A ITO220AC | - | Active | Tube | Through Hole | TO-220-2 Full Pack | ITO-220AC | Standard | 10A | 1.7V @ 10A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 80ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
3,452
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 10A ITO220AC | - | Active | Tube | Through Hole | TO-220-2 Full Pack | ITO-220AC | Standard | 10A | 1.7V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 80ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
893
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 710pF @ 0V, 1MHz | |||
|
VIEW |
1,781
In-stock
|
Infineon Technologies | DIODE SCHOTKY 650V 10A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
