- Series :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
-
- 1.2mA @ 45V (2)
- 10µA @ 1000V (16)
- 10µA @ 100V (21)
- 10µA @ 200V (18)
- 10µA @ 300V (3)
- 10µA @ 400V (22)
- 10µA @ 50V (20)
- 10µA @ 600V (24)
- 10µA @ 800V (15)
- 150µA @ 45V (6)
- 1mA @ 45V (2)
- 500nA @ 50V (1)
- 500nA @ 60V (1)
- 500µA @ 100V (2)
- 500µA @ 20V (6)
- 500µA @ 30V (6)
- 500µA @ 40V (6)
- 500µA @ 45V (4)
- 800µA @ 45V (2)
- Operating Temperature - Junction :
- Applied Filters :
177 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
1,759
In-stock
|
Diodes Incorporated | DIODE GEN PURP 800V 10A R6 | - | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 10A | 1V @ 10A | 10µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -65°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
VIEW |
3,182
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.7V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 65pF @ 4V, 1MHz | |||
|
|
VIEW |
1,486
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.3V @ 6A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
2,843
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
1,083
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
2,881
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
2,718
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
1,796
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.7V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 65pF @ 4V, 1MHz | |||
|
|
VIEW |
1,760
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.3V @ 6A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
1,260
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
731
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
1,559
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
1,855
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
790
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | - | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.7V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 65pF @ 4V, 1MHz | |||
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|
VIEW |
2,635
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 6A R-6 | - | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.3V @ 6A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
2,609
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 6A R-6 | - | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
3,105
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | - | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
3,399
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A R-6 | - | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
1,139
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | - | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
1,075
In-stock
|
Micro Commercial Co | DIODE GEN PURP 50V 10A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 10A | 1.3V @ 10A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | - | |||
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|
VIEW |
1,621
In-stock
|
Micro Commercial Co | DIODE GEN PURP 50V 10A R-6 | - | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 10A | 1V @ 10A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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|
VIEW |
1,617
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
1,598
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
1,529
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 6A R-6 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
751
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 40V 15A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Schottky | 15A | 550mV @ 15A | 500µA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | - | |||
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|
VIEW |
1,367
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 30V 15A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Schottky | 15A | 550mV @ 15A | 500µA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | - | |||
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|
VIEW |
1,825
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 20V 15A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Schottky | 15A | 550mV @ 15A | 500µA @ 20V | 20V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | - | |||
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|
VIEW |
1,678
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 40V 15A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Schottky | 15A | 550mV @ 15A | 500µA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | - | |||
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|
VIEW |
2,409
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 30V 15A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Schottky | 15A | 550mV @ 15A | 500µA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | - | |||
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|
VIEW |
3,167
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 20V 15A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Schottky | 15A | 550mV @ 15A | 500µA @ 20V | 20V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | - | |||
