- Part Status :
- Packaging :
- Supplier Device Package :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
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17 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
3,053
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 16A D2PAK | HEXFRED® | Discontinued at Digi-Key | Tube | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Standard | 16A (DC) | 3V @ 16A | 20µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 135ns | -55°C ~ 150°C | - | |||
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|
VIEW |
3,471
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 16A D2PAK | HEXFRED® | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Standard | 16A (DC) | 3V @ 16A | 20µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 135ns | -55°C ~ 150°C | - | |||
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|
VIEW |
2,939
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 16A D2PAK | HEXFRED® | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Standard | 16A (DC) | 3V @ 16A | 20µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 135ns | -55°C ~ 150°C | - | |||
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|
VIEW |
1,989
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 16A D2PAK | HEXFRED® | Obsolete | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Standard | 16A | 3V @ 16A | 20µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 135ns | -55°C ~ 150°C | - | |||
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|
VIEW |
3,814
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 16A D2PAK | HEXFRED® | Obsolete | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Standard | 16A | 3V @ 16A | 20µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 135ns | -55°C ~ 150°C | - | |||
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|
VIEW |
1,186
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 16A D2PAK | HEXFRED® | Obsolete | Tube | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Standard | 16A | 3V @ 16A | 20µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 135ns | -55°C ~ 150°C | - | |||
|
VIEW |
803
In-stock
|
STMicroelectronics | DIODE GEN PURP 1.2KV 2A SMC | TURBOSWITCH™ | Obsolete | Cut Tape (CT) | Surface Mount | DO-214AB, SMC | SMC | Standard | 2A | 1.65V @ 2A | 20µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 115ns | 125°C (Max) | - | |||
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|
VIEW |
1,303
In-stock
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STMicroelectronics | DIODE GEN PURP 1.2KV 2A SMC | TURBOSWITCH™ | Obsolete | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | SMC | Standard | 2A | 1.65V @ 2A | 20µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 115ns | 125°C (Max) | - | |||
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|
VIEW |
3,995
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 16A TO263AB | Automotive, AEC-Q101, HEXFRED® | Active | Tube | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | Standard | 16A | 3V @ 16A | 20µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 90ns | -55°C ~ 150°C | - | |||
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|
VIEW |
2,232
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 16A TO263AB | Automotive, AEC-Q101, HEXFRED® | Active | Tube | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | Standard | 16A | 3V @ 16A | 20µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 90ns | -55°C ~ 150°C | - | |||
|
VIEW |
3,710
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 16A D2PAK | HEXFRED® | Preliminary | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Standard | 16A (DC) | 3.93V @ 32A | 20µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 135ns | -55°C ~ 150°C | - | |||
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|
VIEW |
3,128
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 16A D2PAK | HEXFRED® | Preliminary | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Standard | 16A (DC) | 3.93V @ 32A | 20µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 135ns | -55°C ~ 150°C | - | |||
|
VIEW |
1,091
In-stock
|
Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 10A TO252-2 | Amp+™ | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 20µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 635pF @ 1V, 1MHz | |||
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|
VIEW |
1,718
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 16A D2PAK | HEXFRED® | Active | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Standard | 16A (DC) | 3.93V @ 32A | 20µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 135ns | -55°C ~ 150°C | - | |||
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|
VIEW |
2,928
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 16A TO263AB | Automotive, AEC-Q101, HEXFRED® | Active | Tube | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | Standard | 16A | 3V @ 16A | 20µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 90ns | -55°C ~ 150°C | - | |||
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|
VIEW |
3,890
In-stock
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STMicroelectronics | DIODE GEN PURP 1.2KV 3A DPAK | TURBOSWITCH™ | Obsolete | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | Standard | 3A | 1.8V @ 3A | 20µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 115ns | 125°C (Max) | - | |||
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|
VIEW |
1,220
In-stock
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Global Power Technologies Group | DIODE SCHTKY 1.2KV 24A TO252-2L | Amp+™ | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | Silicon Carbide Schottky | 24A (DC) | 1.8V @ 8A | 20µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -50°C ~ 175°C | 508pF @ 1V, 1MHz | |||
