Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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IDH08G65C5XKSA1
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RFQ
3,982
In-stock
Infineon Technologies DIODE SCHOTTKY 650V 8A TO220-2 thinQ!™ Discontinued at Digi-Key Tube Through Hole TO-220-2 PG-TO220-2 Silicon Carbide Schottky 8A (DC) 1.7V @ 8A 280µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 250pF @ 1V, 1MHz
IDH05S120AKSA1
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RFQ
3,432
In-stock
Infineon Technologies DIODE SCHOTTKY 1200V 5A TO220-2 thinQ!™ Obsolete Tube Through Hole TO-220-2 PG-TO220-2 Silicon Carbide Schottky 5A (DC) 1.8V @ 5A 120µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 250pF @ 1V, 1MHz
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3,245
In-stock
Infineon Technologies DIODE SCHOTTKY 1.2KV 5A TO247HC thinQ!™ Obsolete Tube Through Hole TO-247-3 Variant PG-TO247HC-3 Silicon Carbide Schottky 5A (DC) 1.8V @ 10A 120µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 250pF @ 1V, 1MHz
IDH08G65C5XKSA2
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RFQ
2,624
In-stock
Infineon Technologies DIODE SCHOTTKY 650V 8A TO220-2-1 thinQ!™ Active Tube Through Hole TO-220-2 PG-TO220-2-1 Silicon Carbide Schottky 8A (DC) 1.7V @ 8A 140µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 250pF @ 1V, 1MHz
NXPLQSC10650Q
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RFQ
1,598
In-stock
WeEn Semiconductors DIODE SCHOTTKY 650V 10A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 10A 1.85V @ 10A 230µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 250pF @ 1V, 1MHz