Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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HERAF806G C0G
RFQ
VIEW
RFQ
1,036
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 8A 1.7V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -55°C ~ 150°C 60pF @ 4V, 1MHz
HERA806G C0G
RFQ
VIEW
RFQ
2,746
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.7V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -55°C ~ 150°C 55pF @ 4V, 1MHz
APT15D60BG
RFQ
VIEW
RFQ
2,604
In-stock
Microsemi Corporation DIODE GEN PURP 600V 15A TO247 - Active Tube Through Hole TO-247-2 TO-247 Standard 15A 1.8V @ 15A 150µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -55°C ~ 175°C -
HERAF1006G C0G
RFQ
VIEW
RFQ
3,452
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 10A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 10A 1.7V @ 10A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -55°C ~ 150°C 60pF @ 4V, 1MHz
FFPF05U60STTU
RFQ
VIEW
RFQ
1,689
In-stock
ON Semiconductor DIODE GEN PURP 600V 5A TO220F - Obsolete Tube Through Hole TO-220-2 Full Pack TO-220F-2L Standard 5A 2.3V @ 5A 2.5µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -65°C ~ 150°C -
FFPF05U60STU
RFQ
VIEW
RFQ
2,542
In-stock
ON Semiconductor DIODE GEN PURP 600V 5A TO220F - Obsolete Tube Through Hole TO-220-2 Full Pack TO-220F-2L Standard 5A 2.3V @ 5A 2.5µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -65°C ~ 150°C -
RURG3060-F085
RFQ
VIEW
RFQ
3,830
In-stock
ON Semiconductor DIODE GEN PURP 600V 30A TO247-2 Automotive, AEC-Q101 Active Tube Through Hole TO-247-2 TO-247-2 Standard 30A 1.5V @ 30A 250µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -55°C ~ 175°C -
HERAF1606G C0G
RFQ
VIEW
RFQ
1,015
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 16A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 16A 1.7V @ 16A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -55°C ~ 150°C 110pF @ 4V, 1MHz
APT15D60KG
RFQ
VIEW
RFQ
1,650
In-stock
Microsemi Corporation DIODE GEN PURP 600V 15A TO220 - Active Tube Through Hole TO-220-2 TO-220 [K] Standard 15A 1.8V @ 15A 250µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -55°C ~ 175°C -
FFH60UP60S
RFQ
VIEW
RFQ
2,102
In-stock
ON Semiconductor DIODE GEN PURP 600V 60A TO247 - Active Tube Through Hole TO-247-2 TO-247-2 Standard 60A 1.7V @ 60A 100µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -65°C ~ 150°C -
FFH60UP60S3
RFQ
VIEW
RFQ
814
In-stock
ON Semiconductor DIODE GEN PURP 600V 60A TO247 - Active Tube Through Hole TO-247-3 TO-247 Standard 60A 1.7V @ 60A 100µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -65°C ~ 150°C -