Voltage - Forward (Vf) (Max) @ If :
Reverse Recovery Time (trr) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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Taiwan Semiconductor Corporation DIODE GEN PURP 300V 1A TS-1 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 10pF @ 4V, 1MHz
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1,755
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Taiwan Semiconductor Corporation DIODE GEN PURP 300V 1A TS-1 Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 10pF @ 4V, 1MHz
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3,825
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Taiwan Semiconductor Corporation DIODE GEN PURP 300V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1V @ 1A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 15pF @ 4V, 1MHz
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1,564
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Taiwan Semiconductor Corporation DIODE GEN PURP 300V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1V @ 1A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 15pF @ 4V, 1MHz
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2,338
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Taiwan Semiconductor Corporation DIODE GEN PURP 300V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 10pF @ 4V, 1MHz
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2,673
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Taiwan Semiconductor Corporation DIODE GEN PURP 300V 1A TS-1 - Active Tape & Box (TB) Through Hole T-18, Axial TS-1 Standard 1A 1.3V @ 1A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 10pF @ 4V, 1MHz