- Manufacture :
- Series :
- Supplier Device Package :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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VIEW |
2,409
In-stock
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Rohm Semiconductor | DIODE SCHOTTKY 650V 10A TO220FM | - | Active | Tube | Through Hole | TO-220-2 | TO-220FM | Silicon Carbide Schottky | 10A (DC) | 1.55V @ 10A | 200µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 365pF @ 1V, 1MHz | |||
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VIEW |
1,856
In-stock
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Rohm Semiconductor | DIODE SCHOTTKY 650V 10A TO-220-2 | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A (DC) | 1.55V @ 10A | 200µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 365pF @ 1V, 1MHz | |||
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VIEW |
1,682
In-stock
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Infineon Technologies | DIODE SCHOTTKY 1200V 8A TO220-2 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 8A (DC) | 1.95V @ 8A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 365pF @ 1V, 1MHz | |||
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VIEW |
2,958
In-stock
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Rohm Semiconductor | DIODE SCHOTTKY 650V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A (DC) | 1.55V @ 10A | 200µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 365pF @ 1V, 1MHz |