Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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SF64GHB0G
RFQ
VIEW
RFQ
2,817
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF64G B0G
RFQ
VIEW
RFQ
2,147
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF44GHB0G
RFQ
VIEW
RFQ
680
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1V @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
6A02B-G
RFQ
VIEW
RFQ
2,534
In-stock
Comchip Technology DIODE GEN PURP 200V 6A R6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 125°C 100pF @ 4V, 1MHz
SF44G B0G
RFQ
VIEW
RFQ
1,337
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1V @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
6A02-G
RFQ
VIEW
RFQ
2,768
In-stock
Comchip Technology DIODE GEN PURP 200V 6A R6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 125°C 100pF @ 4V, 1MHz