Supplier Device Package :
Current - Average Rectified (Io) :
Voltage - Forward (Vf) (Max) @ If :
Operating Temperature - Junction :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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UG2D B0G
RFQ
VIEW
RFQ
2,292
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 2A DO204AC - Active Bulk Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 2A 950mV @ 2A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 150°C 35pF @ 4V, 1MHz
MUR4L20 B0G
RFQ
VIEW
RFQ
3,780
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 890mV @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR420 B0G
RFQ
VIEW
RFQ
624
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 890mV @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR4L20HB0G
RFQ
VIEW
RFQ
3,222
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 890mV @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR420HB0G
RFQ
VIEW
RFQ
3,624
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD Automotive, AEC-Q101 Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 890mV @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C 65pF @ 4V, 1MHz
UG2DHB0G
RFQ
VIEW
RFQ
2,574
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 2A DO204AC Automotive, AEC-Q101 Active Bulk Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) Standard 2A 950mV @ 2A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 150°C 35pF @ 4V, 1MHz