Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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JANTXV1N4245
RFQ
VIEW
RFQ
2,267
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL Military, MIL-PRF-19500/286 Active Bulk Through Hole A, Axial - Standard 1A 1.3V @ 3A 1µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 5µs -65°C ~ 175°C -
1N4245
RFQ
VIEW
RFQ
2,344
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL - Active Bulk Through Hole A, Axial - Standard 1A 1.3V @ 3A 1µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 5µs -65°C ~ 175°C -
Default Photo
RFQ
VIEW
RFQ
3,374
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL Military, MIL-PRF-19500/429 Active Bulk Through Hole A, Axial - Standard 1A 1.6V @ 3A 500nA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C 45pF @ 12V, 1MHz
JANTXV1N5614
RFQ
VIEW
RFQ
1,207
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL Military, MIL-PRF-19500/427 Active Bulk Through Hole A, Axial - Standard 1A 1.3V @ 3A 500nA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 2µs -65°C ~ 200°C -
Default Photo
RFQ
VIEW
RFQ
3,793
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL Military, MIL-PRF-19500/359 Active Bulk Through Hole A, Axial - Standard 1A 1.3V @ 1A 1µA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C 45pF @ 12V, 1MHz
JANTX1N4942
RFQ
VIEW
RFQ
3,219
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL Military, MIL-PRF-19500/359 Active Bulk Through Hole A, Axial A, Axial Standard 1A 1.3V @ 1A 1µA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C -
JANTX1N5614
RFQ
VIEW
RFQ
1,198
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL Military, MIL-PRF-19500/427 Active Bulk Through Hole A, Axial - Standard 1A 1.3V @ 3A 500nA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 2µs -65°C ~ 200°C -
JAN1N4245
RFQ
VIEW
RFQ
916
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL Military, MIL-PRF-19500/286 Active Bulk Through Hole A, Axial - Standard 1A 1.3V @ 3A 1µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 5µs -65°C ~ 175°C -
1N3611
RFQ
VIEW
RFQ
1,197
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL - Active Bulk Through Hole A, Axial - Standard 1A 1.1V @ 1A 1µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
1N4942
RFQ
VIEW
RFQ
771
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL - Active Bulk Through Hole A, Axial - Standard 1A 1.3V @ 1A 1µA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C 45pF @ 12V, 1MHz
JANTX1N4245
RFQ
VIEW
RFQ
2,812
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL Military, MIL-PRF-19500/286 Active Bulk Through Hole A, Axial - Standard 1A 1.3V @ 3A 1µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 5µs -65°C ~ 175°C -
JAN1N3611
RFQ
VIEW
RFQ
2,783
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL Military, MIL-PRF-19500/228 Active Bulk Through Hole A, Axial - Standard 1A 1.1V @ 1A 100µA @ 300V 200V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
Default Photo
RFQ
VIEW
RFQ
1,143
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL Military, MIL-PRF-19500/429 Active Bulk Through Hole A, Axial - Standard 1A 1.6V @ 3A 500nA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C -
UES1104
RFQ
VIEW
RFQ
3,983
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL - Active Bulk Through Hole A, Axial - Standard 1A 1.25V @ 1A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
JANS1N5615
RFQ
VIEW
RFQ
3,548
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL Military, MIL-PRF-19500/429 Active Bulk Through Hole A, Axial - Standard 1A 1.6V @ 3A 500nA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C 45pF @ 12V, 1MHz
1N5614
RFQ
VIEW
RFQ
3,125
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL - Active Bulk Through Hole A, Axial - Standard 1A 1.3V @ 3A 500nA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 2µs -65°C ~ 200°C -
1N5615
RFQ
VIEW
RFQ
3,441
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL - Active Bulk Through Hole A, Axial - Standard 1A 1.6V @ 3A 500nA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C 45pF @ 12V, 1MHz
JAN1N4942
RFQ
VIEW
RFQ
3,895
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL Military, MIL-PRF-19500/359 Active Bulk Through Hole A, Axial - Standard 1A 1.3V @ 1A 1µA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C -
JANTX1N5615
RFQ
VIEW
RFQ
1,759
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL Military, MIL-PRF-19500/429 Active Bulk Through Hole A, Axial A-PAK Standard 1A 1.6V @ 3A 500nA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C 45pF @ 12V, 1MHz
JANTX1N3611
RFQ
VIEW
RFQ
2,818
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL Military, MIL-PRF-19500/228 Active Bulk Through Hole A, Axial - Standard 1A 1.1V @ 1A 1µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
JAN1N5614
RFQ
VIEW
RFQ
3,194
In-stock
Microsemi Corporation DIODE GEN PURP 200V 1A AXIAL Military, MIL-PRF-19500/427 Active Bulk Through Hole A, Axial - Standard 1A 1.3V @ 3A 500nA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 2µs -65°C ~ 200°C -