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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Mounting Type	Package / Case	Supplier Device Package	Diode Type	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Speed	Reverse Recovery Time (trr)	Operating Temperature - Junction	Capacitance @ Vr, F
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	1N485B BK	RFQ VIEW	PDF RFQ	641 In-stock	Central Semiconductor Corp	DIODE GP 200V 200MA DO204AL		-	Obsolete	Bulk	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	Standard	200mA	1V @ 100mA	25nA @ 200V	200V	Small Signal =< 200mA (Io), Any Speed	-	-65°C ~ 200°C	-
	SF14GHB0G	RFQ VIEW	PDF RFQ	951 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL		Automotive, AEC-Q101	Active	Bulk	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	Standard	1A	950mV @ 1A	5µA @ 200V	200V	Fast Recovery = 200mA (Io)	35ns	-55°C ~ 150°C	20pF @ 4V, 1MHz
	SF14G B0G	RFQ VIEW	PDF RFQ	2,640 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL		-	Active	Bulk	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	Standard	1A	950mV @ 1A	5µA @ 200V	200V	Fast Recovery = 200mA (Io)	35ns	-55°C ~ 150°C	20pF @ 4V, 1MHz
	UF1DHB0G	RFQ VIEW	PDF RFQ	2,750 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL		Automotive, AEC-Q101	Active	Bulk	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	Standard	1A	1V @ 1A	5µA @ 200V	200V	Fast Recovery = 200mA (Io)	50ns	-55°C ~ 150°C	17pF @ 4V, 1MHz
	UF4003HB0G	RFQ VIEW	PDF RFQ	3,637 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL		Automotive, AEC-Q101	Active	Bulk	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	Standard	1A	1V @ 1A	5µA @ 200V	200V	Fast Recovery = 200mA (Io)	50ns	-55°C ~ 150°C	17pF @ 4V, 1MHz
	HER103G B0G	RFQ VIEW	PDF RFQ	3,863 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL		-	Active	Bulk	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	Standard	1A	1V @ 1A	5µA @ 200V	200V	Fast Recovery = 200mA (Io)	50ns	-55°C ~ 150°C	15pF @ 4V, 1MHz
	1N4935GHB0G	RFQ VIEW	PDF RFQ	1,885 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL		Automotive, AEC-Q101	Active	Bulk	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	Standard	1A	1.2V @ 1A	5µA @ 200V	200V	Fast Recovery = 200mA (Io)	200ns	-55°C ~ 150°C	10pF @ 4V, 1MHz
	UF4003 B0G	RFQ VIEW	PDF RFQ	3,592 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL		-	Active	Bulk	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	Standard	1A	1V @ 1A	5µA @ 200V	200V	Fast Recovery = 200mA (Io)	50ns	-55°C ~ 150°C	17pF @ 4V, 1MHz
	UF1D B0G	RFQ VIEW	PDF RFQ	1,326 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL		-	Active	Bulk	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	Standard	1A	1V @ 1A	5µA @ 200V	200V	Fast Recovery = 200mA (Io)	50ns	-55°C ~ 150°C	17pF @ 4V, 1MHz
	1N4935G B0G	RFQ VIEW	PDF RFQ	2,144 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL		-	Active	Bulk	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	Standard	1A	1.2V @ 1A	5µA @ 200V	200V	Fast Recovery = 200mA (Io)	200ns	-55°C ~ 150°C	10pF @ 4V, 1MHz
	1N4003GHB0G	RFQ VIEW	PDF RFQ	3,247 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL		Automotive, AEC-Q101	Active	Bulk	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	Standard	1A	1V @ 1A	5µA @ 200V	200V	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	10pF @ 4V, 1MHz
	1N4003G B0G	RFQ VIEW	PDF RFQ	1,605 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL		-	Active	Bulk	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	Standard	1A	1V @ 1A	5µA @ 200V	200V	Standard Recovery >500ns, > 200mA (Io)	-	-55°C ~ 150°C	10pF @ 4V, 1MHz
	FR103G B0G	RFQ VIEW	PDF RFQ	1,261 In-stock	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL		-	Active	Bulk	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	Standard	1A	1.3V @ 1A	5µA @ 200V	200V	Fast Recovery = 200mA (Io)	150ns	-55°C ~ 150°C	10pF @ 4V, 1MHz

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